Analysis of power conversion limitation factors of Cu (InxGa1−x) (Se)2 thin-film solar cells using SCAPS

Cu(InGa)Se2 THIN-FILM SOLAR CELLS: COMPARATIVE LIFE-CYCLE ANALYSIS OF BUFFER LAYERS

A motivation for replacing the current CdS buffer layer in CIGS PV is to avoid potential environmentaland humanhealth risks related to cadmium compounds. However, to gain a full perspective, such risks should be evaluated throughout the entire life cycle of the CdS, and also of alternative buffer layers. Based on data from the National Renewable Energy Laboratory and Global Solar Energy, we exa...

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells

The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been investigated. Bilayer structures of CuInSe2 on top of CuGaSe2 and vice versa have been fabricated in both a Cu-rich and Cu-poor process (in relation to the ideal stoichiometry). In each process molybdenum coated soda-lime glass with and without a sodium barrier was used. These bilayers were analyzed wi...

Chemical Bath Deposited CdS for CdTe and Cu(In,Ga)Se2 Thin Film Solar Cells Processing

Extensive research has been done during the last two decades on cadmium sulfide (CdS) thin films, mainly due to their application to large area electronic devices such as thin film field-effect transistors (Schon et al., 2001) and solar cells (Romeo et al., 2004). For the latter case, chemical bath deposited (CBD) CdS thin films have been used extensively in the processing of CdTe and Cu(In,Ga)...

Polycrystalline Cu(InGa)Se2/CdS Thin Film Solar Cells Made by New Precursors

Development of Flexible Cu(In,Ga)Se2 Thin Film Solar Cell by Lift-Off Process